Dr. V. Sandeep

Dr. V. Sandeep

Position: Assistant Professor
Email: sandeepv@mite.ac.in

Educational Qualification

  • PDF – Post-doctoral research – GaN HEMTs
  • PhD. in the field of GaN-based semiconductor devices from Kalasalingam Academy of Research and Education in the year 2021.
  • MTech. in VLSI Design and Embedded Systems from Reva Institute of Technology and Management in the year 2017.
  • BE. in Electronics and Communication Engineering from Hindusthan College of Engineering and Technology in the year 2012.

Experience

  • 1 year and 6 months
  • Post doctoral research fellow: in Kalasalingam Academy of Research and Education, from 02-05-2022 to 25-01-2024.

Area of Interest

Semiconductor devices, VLSI circuit design, Micro and Nanoelectronics

Subjects handled

  • Electromagnetic Theory
  • Sensors & Actuators
  • Analog Electronic Circuits
  • Fundamentals of Electronics Engineering
  • FPGA System Design using Verilog
  • Research Methodology & Intellectual Property Rights

Professional Membership

IEEE: 95075557

Orcid ID

0000-0002-0425-8688

Publons ID

AAY-3363-2021

Scopus ID

57215271820

Google Scholar ID

TomyWFMAAAAJ&hl (‪Sandeep V – ‪Google Scholar)

 Workshop/FDP/STTP Attended

  • Participated in a Hands-on workshop on “Mastering Flipped Classroom Techniques for Effective Teaching” at Mangalore Institute of Technology & Engineering, Karnataka, on 1st August, 2025
  • Participated in an AICTE-ATAL Faculty Development Program on “Quantum Computing – Research Perspective in Healthcare Applications” at P.S.R. Engineering College, Tamil Nadu, from 16th to 21st December, 2024
  • Participated in a SERB Sponsored Two Days seminar on “Semiconductor Confluence: Innovations, Real Time Applications and Diversities”, organized by Karpagam Academy of Higher Education, Coimbatore on 4th and 5th July, 2024
  • Participated in a One-week Online Faculty Development Program on “Recent Trends in Computing 4.0” organized by the Vishwakarma Institute of Technology, Pune from 8th to 13th July, 2024
  • Participated in an International Faculty Development Program on “AI and Gen AI with Industry Application” organized by MIT Academy of Engineering (MIE AOE), Maharashtra, MIE Mysuru, NEC Andra Pradesh and MEC Telangana, from 16th to 22nd July, 2024
  • Participated in an INUP-i2i 2022 8th User Awareness Workshop on Fabrication and Characterization Facility for Nanotechnology, organized by Indian Institute of Technology Delhi, on 22nd and 23rd June 2023.
  • Participated in an INUP-i2i 2022 Online Familiarization Workshop on 2D Semiconductor Nanodevices and Simulations, organized by the Centre for Nanotechnology, Indian Institute of Technology Guwahati, from 8th to 10th December 2022.
  • Participated in an INUP-i2i Online Familiarization Workshop on Nanofabrication and Characterization, organized by Indian Institute of Technology Kharagpur, from 8th to 10th February 2023.
  • Participated and assisted in organizing an AICTE Training and Learning (ATAL) Sponsored One-Week Faculty Development Program on “Future Perspective of Semiconductor Devices”, organized by the Department of ECE, Kalasalingam Academy of Research and Education, from 21st to 25th June, 2021.
  • Participated and assisted in organizing a Two-Day National Level Hands-on Training on “Modelling of Semiconductor Quantum Devices for a Sustainable Energy System using TCAD”, organized by IEEE Student Branch, in association with the Department of ECE, Kalasalingam Academy of Research and Education, on 8th and 9th January, 2021.
  • Participated in a Three-day National Level Hands-on Training Program on “Power Semiconductor Device Modeling and TCAD Simulation,” organized by Vellore Institute of Technology, from 29th November to 1st December, 2019.
  • Participated and assisted in organizing in a Two-day workshop on “Technology development with TCAD,” organized by Department of ECE, Kalasalingam Academy of Research and Education, 29th and 30th April, 2019.
  • Participated in the Texas Instruments India Analog Maker Competition 2015, conducted by Texas Instruments India University Program in association with Starcom Information Technology Limited, held at Reva Institute of Technology & Management.

 

Conference Attended

  • IEEE International Semiconductor Conference (CAS) organized by the National Institute for R&D in Microtechnologies, Romania, to present a paper “Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm”, on 11th October 2023.
  • 4th International IEEE Conference on Electronics, Communication and Aerospace Technology, organized by RVS Technical Campus Coimbatore, Tamil Nadu, to present a paper “CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics”, on 5th November 2020.
  • Kalasalingam Global Conference (KGC 2019), organized by Kalasalingam Academy of Research and Education, Tamil Nadu, to present a paper “Analytical Modeling of AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) through Polarization effects”, on 18th December 2019.
  • IEEE International Conference on Electron Devices Society Kolkata Chapter (EDKCON), organized by IEEE Electron Devices Society, to present a paper “Performance Evaluation of LiNbO3-based Negative Capacitance Field Effect Transistors (NCFETs)”, on 26th November 2022.
  • IEEE International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS), organized by Kalasalingam Academy of Research and Education, Tamil Nadu, to present a paper “Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)” on 11th April 2019.
  • National Conference on Advancements in Science, Engineering and Technology, organized by RR Institute of Technology, Bengaluru, Karnataka to present a paper “A Secured E Health Architecture using the Internet of Things”, on 7th May 2016.

 

Journals Published 

  • Sandeep, V., Pravin, J.C. and Kumar, S.A., 2024. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review. Microelectronics Reliability, 159, p.115445. DOI: https://doi.org/10.1016/j.microrel.2024.115445
  • Sandeep, V., Pravin, J.C., Babu, A.R. and Prajoon, P., 2020. Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique. IEEE Transactions on Electron Devices, 67(9), pp.3558-3563.
  • Sandeep, V. and Pravin, J.C., 2021. Influence of graded AlGaN sub-channel over the DC and breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT. Superlattices and Microstructures, 156, p.106954.
  • Viswanathan, S., Pravin, C., Arasamudi, R.B. and Pavithran, P., 2022. Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35(1), p.e2936.
  • Kumar, S.A., Pravin, J.C., Sandeep, V. and Sridevi, R., 2023. Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances. Physica E: Low-dimensional Systems and Nanostructures, 147, p.115619.
  • Saritha, N.R., Pravin, J.C., Sandeep, V. and Ramakrishnan, V.N., 2023. Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET. Journal of Computational Electronics, pp.1423-1432.
  • Sandeep, V. and Charles Pravin, J., 2021. Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT.
  • Sandeep, V., Kondappan, S. and Jone, A.A., 2021. Anomaly intrusion detection using svm and c4. 5 classification with an improved particle swarm optimization (I-PSO). International Journal of Information Security and Privacy (IJISP), 15(2), pp.113-130.
  • Sandeep, V., Jawandhiya, P.M., Alagarsamy, S.B. and Harkut, A.V., 2019. Robust Ct Images Noise Reduction Using Wavelet And Contourlet Transform. International Journal Of Innovations In Scientific And Engineering Research (IJISER), 6(4), pp.21-28.
  • Sandeep, V., Pravin, J.C. and Kumar, S.A., 2023, October. Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm. In 2023 International Semiconductor Conference (CAS)(pp. 161-164). IEEE.
  • Sandeep, V., Pravin, J.C., Babu, A.R. and Prajoon, P., 2020, November. CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics. In 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA)(pp. 471-478). IEEE.
  • Sandeep, V. and Pravin, J.C., 2021. Analytical Modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through Polarization Effects. In Sustainable development in engineering and technology(pp. 371-383). 3ciencias.
  • Pravin, J.C., Anusha, G., Supriya, C.T., Sumanth, P.S., Sandeep, V. and Selle, J., 2022, November. Performance Evaluation of LiNbO 3-based Negative Capacitance Field Effect Transistors (NCFETs). In 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)(pp. 96-101). IEEE.
  • Sandeep, V. and Saravanan, K., 2022. A comprehensive analysis on different machine learning and data mining techniques for anomaly intrusion detection. In Sustainable development in engineering and technology(pp. 373-390). 3ciencias.
  • Pravin, J.C., Kirtika, K. and Sandeep, V., 2019, April. Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs). In 2019 IEEE International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS)(pp. 1-4). IEEE.
  • Sandeep, V. A Secured E-health architecture using the Internet of Things. In National Conference on Advancement in Science, Engineering and Technology (ASET – 2016) (pp. 219-224). International Journal of Scientific & Engineering Research, 7 (5), (pp. 219-224).

Book chapters:

  • Sandeep, V. and Pravin, J.C., 2024. Numerical Modelling of GaN HEMTS. In Modeling of AlGaN/GaN High Electron Mobility Transistors(pp. 207-241). Singapore: Springer Nature Singapore. DOI: 10.1007/978-981-97-7506-4_9
  • Malu, U., Charles Pravin, J. and Sandeep, V., 2025. Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET: A Comprehensive Review. Field Effect Transistors, pp.373-391. DOI: 10.1002/9781394248506.ch22
  • Sandeep, V., Pravin, J.C. and Mohan, B., 2025. A Field Plate Engineering Approach for Optimizing DC and Breakdown Performances of an AlGaN/GaN/AlGaN MOS-HEMT. In Sustainable Materials and Technologies in VLSI and Information Processing (pp. 264-269). CRC Press.